STB36NM60N
vs
TK28N65W5,S1F
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
STMICROELECTRONICS
|
TOSHIBA CORP
|
Part Package Code |
D2PAK
|
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
,
|
Pin Count |
4
|
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
STMicroelectronics
|
Toshiba
|
Avalanche Energy Rating (Eas) |
345 mJ
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min |
600 V
|
|
Drain Current-Max (ID) |
29 A
|
|
Drain-source On Resistance-Max |
0.105 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code |
TO-263AB
|
|
JESD-30 Code |
R-PSSO-G2
|
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
|
Number of Terminals |
2
|
|
Operating Mode |
ENHANCEMENT MODE
|
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel) |
245
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
|
Power Dissipation-Max (Abs) |
250 W
|
|
Pulsed Drain Current-Max (IDM) |
116 A
|
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
|
Terminal Finish |
Matte Tin (Sn) - annealed
|
|
Terminal Form |
GULL WING
|
|
Terminal Position |
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
2
|
1
|
Factory Lead Time |
|
53 Weeks, 1 Day
|
|
|
|
Compare STB36NM60N with alternatives
Compare TK28N65W5,S1F with alternatives