SSW7N60B vs STB3NK60ZT4 feature comparison

SSW7N60B Fairchild Semiconductor Corporation

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STB3NK60ZT4 STMicroelectronics

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP STMICROELECTRONICS
Part Package Code TO-263
Package Description D2PAK-3 D2PAK-3
Pin Count 3 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 420 mJ 150 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 7 A 2.4 A
Drain-source On Resistance-Max 1.2 Ω 3.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 147 W 45 W
Pulsed Drain Current-Max (IDM) 28 A 9.6 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Date Of Intro 1980-01-04
Samacsys Manufacturer STMicroelectronics
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30

Compare SSW7N60B with alternatives

Compare STB3NK60ZT4 with alternatives