SSH22N40
vs
BUZ325
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SIEMENS A G
Part Package Code
TO-3P
Package Description
FLANGE MOUNT, R-PSFM-T3
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
22 A
12.5 A
Drain-source On Resistance-Max
0.25 Ω
0.35 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
230 W
125 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
3
Rohs Code
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
670 mJ
Feedback Cap-Max (Crss)
170 pF
JEDEC-95 Code
TO-218
JESD-609 Code
e0
Power Dissipation Ambient-Max
125 W
Pulsed Drain Current-Max (IDM)
50 A
Terminal Finish
Tin/Lead (Sn/Pb)
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
600 ns
Turn-on Time-Max (ton)
180 ns
Compare SSH22N40 with alternatives
Compare BUZ325 with alternatives