SR850 vs GPA801 feature comparison

SR850 Galaxy Microelectronics

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GPA801 Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PSFM-T2 R-PSFM-T2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature FREE WHEELING DIODE HIGH RELIABILITY, LOW POWER LOSS
Application GENERAL PURPOSE EFFICIENCY
Case Connection CATHODE CATHODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.75 V 1.1 V
JEDEC-95 Code TO-220AC TO-220AC
JESD-30 Code R-PSFM-T2 R-PSFM-T2
Non-rep Pk Forward Current-Max 150 A 150 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 8 A 8 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Current-Max 1000 µA
Surface Mount NO NO
Technology SCHOTTKY
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Base Number Matches 1 6
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Terminal Finish Matte Tin (Sn)

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