SPD09P06PLG
vs
2SJ239
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
TOSHIBA CORP
Part Package Code
TO-252AB
Package Description
SMALL OUTLINE, R-PSSO-G2
IN-LINE, R-PSIP-T3
Pin Count
4
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Toshiba
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
70 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
9.7 A
5 A
Drain-source On Resistance-Max
0.25 Ω
0.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AB
JESD-30 Code
R-PSSO-G2
R-PSIP-T3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
IN-LINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
42 W
Pulsed Drain Current-Max (IDM)
38.8 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
Tin (Sn)
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
HTS Code
8541.29.00.95
Case Connection
DRAIN
Power Dissipation Ambient-Max
20 W
Transistor Application
SWITCHING
Compare SPD09P06PLG with alternatives
Compare 2SJ239 with alternatives