Part Details for SPD09P06PLG by Infineon Technologies AG
Overview of SPD09P06PLG by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SPD09P06PLG
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 77 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 9.7A I(D), 60V, 0.25OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AB | 7705 |
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$0.2961 / $0.8460 | Buy Now |
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ComSIT USA | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB RoHS: Compliant |
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RFQ |
Part Details for SPD09P06PLG
SPD09P06PLG CAD Models
SPD09P06PLG Part Data Attributes
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SPD09P06PLG
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPD09P06PLG
Infineon Technologies AG
Power Field-Effect Transistor, 9.7A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AB | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 70 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 9.7 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 38.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SPD09P06PLG
This table gives cross-reference parts and alternative options found for SPD09P06PLG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD09P06PLG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD8P06LE | 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA | Rochester Electronics LLC | SPD09P06PLG vs RFD8P06LE |
| RFD8P06LESM9A | 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | SPD09P06PLG vs RFD8P06LESM9A |
| FX6ASJ-06 | Power Field-Effect Transistor, 6A I(D), 60V, 0.21ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, MP-3, 3 PIN | Powerex Power Semiconductors | SPD09P06PLG vs FX6ASJ-06 |
| 2SJ230 | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.27ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, FLP-3 | SANYO Electric Co Ltd | SPD09P06PLG vs 2SJ230 |
| FX6ASJ-06 | 6A, 60V, 0.37ohm, P-CHANNEL, Si, POWER, MOSFET, MP-3A, SC-63, 3 PIN | Renesas Electronics Corporation | SPD09P06PLG vs FX6ASJ-06 |
| RFD8P06LE | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | SPD09P06PLG vs RFD8P06LE |
| RFD8P06LE | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Fairchild Semiconductor Corporation | SPD09P06PLG vs RFD8P06LE |
| SPU09P06PL | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPD09P06PLG vs SPU09P06PL |
| RFD8P06LESM9A | 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA VARIANT, 3 PIN | Rochester Electronics LLC | SPD09P06PLG vs RFD8P06LESM9A |
| 2SJ315 | TRANSISTOR 0.04 ohm, POWER, FET, SC-64, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | SPD09P06PLG vs 2SJ315 |