SPB20N60S5ATMA1
vs
STW28N65M2
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Not Recommended
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
STMICROELECTRONICS
Part Package Code
D2PAK
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
4
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Date Of Intro
1999-11-09
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
690 mJ
760 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
650 V
Drain Current-Max (ID)
20 A
20 A
Drain-source On Resistance-Max
0.19 Ω
0.18 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-247
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
40 A
80 A
Qualification Status
Not Qualified
Surface Mount
YES
NO
Terminal Finish
Tin (Sn)
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Factory Lead Time
16 Weeks
Samacsys Manufacturer
STMicroelectronics
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max (Abs)
170 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
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