SP6150AE3
vs
JAN1N6150A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
MICROSEMI CORP
MICROCHIP TECHNOLOGY INC
Package Description
O-LALF-W2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Min
20.9 V
20.9 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
3 W
Rep Pk Reverse Voltage-Max
16.7 V
16.7 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
6
Rohs Code
JESD-609 Code
e0
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Qualification Status
Qualified
Reference Standard
MIL-19500
Terminal Finish
TIN LEAD
Compare SP6150AE3 with alternatives
Compare JAN1N6150A with alternatives