SP001552016
vs
SHD239604
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
SENSITRON SEMICONDUCTOR
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
560 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
50 A
50 A
Drain-source On Resistance-Max
0.04 Ω
0.045 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247AC
JESD-30 Code
R-PSFM-T3
R-CBCC-N3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
CHIP CARRIER
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
200 A
200 A
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
NO LEAD
Terminal Position
SINGLE
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
Rohs Code
Package Description
CHIP CARRIER, R-CBCC-N3
Pin Count
3
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Qualification Status
Not Qualified
Compare SP001552016 with alternatives
Compare SHD239604 with alternatives