SOD2A0NJ vs ES2JFSHM2G feature comparison

SOD2A0NJ Galaxy Microelectronics

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ES2JFSHM2G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-F2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Application GENERAL PURPOSE EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.7 V
JESD-30 Code R-PDSO-F2 R-PDSO-F2
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 2 A 2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 600 V 600 V
Reverse Current-Max 5 µA 1 µA
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 1
HTS Code 8541.10.00.80
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS, SNUBBER DIODE
JESD-609 Code e3
Moisture Sensitivity Level 1
Reference Standard AEC-Q101
Reverse Recovery Time-Max 0.035 µs
Terminal Finish MATTE TIN

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