SNN4010D
vs
IRF5N3710PBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Contact Manufacturer
Active
Ihs Manufacturer
KODENSHI AUK CORP
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PSSO-G2
CHIP CARRIER, R-CBCC-N3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
163 mJ
250 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
45 A
45 A
Drain-source On Resistance-Max
0.03 Ω
0.028 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
R-CBCC-N3
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
CHIP CARRIER
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
180 A
180 A
Surface Mount
YES
YES
Terminal Form
GULL WING
NO LEAD
Terminal Position
SINGLE
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare SNN4010D with alternatives
Compare IRF5N3710PBF with alternatives