SMMUN2113LT1 vs MUN2112T1 feature comparison

SMMUN2113LT1 onsemi

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MUN2112T1 Motorola Mobility LLC

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Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer ON SEMICONDUCTOR MOTOROLA INC
Part Package Code SOT-23
Package Description CASE 318-08, TO-236, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Manufacturer Package Code CASE 318-08
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1 BUILT-IN BIAS RESISTOR RATIO IS 1:1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 60
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type PNP PNP
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
HTS Code 8541.21.00.95
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 0.2 W
VCEsat-Max 0.25 V

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