SMMBT5551LT1G
vs
PMBT5551TRL
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Yes
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ONSEMI
NXP SEMICONDUCTORS
Part Package Code
SOT-23 (TO-236) 3 LEAD
Pin Count
3
Manufacturer Package Code
318
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Factory Lead Time
10 Weeks
Date Of Intro
1999-01-01
Samacsys Manufacturer
onsemi
Collector Current-Max (IC)
0.6 A
0.6 A
Collector-Emitter Voltage-Max
160 V
160 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
30
80
JEDEC-95 Code
TO-236
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
0.3 W
Reference Standard
AEC-Q101
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn) - annealed
Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
VCEsat-Max
0.2 V
0.15 V
Base Number Matches
1
2
Rohs Code
Yes
Package Description
SMALL OUTLINE, R-PDSO-G3
Qualification Status
Not Qualified
Transition Frequency-Nom (fT)
200 MHz
Compare SMMBT5551LT1G with alternatives
Compare PMBT5551TRL with alternatives