SMMBT5551LT1G
vs
PMBT5551TRL
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
NXP SEMICONDUCTORS
|
| Part Package Code |
SOT-23 (TO-236) 3 LEAD
|
|
| Pin Count |
3
|
|
| Manufacturer Package Code |
318-08
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
11 Weeks
|
|
| Date Of Intro |
1999-01-01
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Collector Current-Max (IC) |
0.6 A
|
0.6 A
|
| Collector-Emitter Voltage-Max |
160 V
|
160 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
80
|
| JEDEC-95 Code |
TO-236
|
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.3 W
|
|
| Reference Standard |
AEC-Q101
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Matte Tin (Sn) - annealed
|
Tin (Sn)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| VCEsat-Max |
0.2 V
|
0.15 V
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
Yes
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
| Qualification Status |
|
Not Qualified
|
| Transition Frequency-Nom (fT) |
|
200 MHz
|
|
|
|
Compare SMMBT5551LT1G with alternatives
Compare PMBT5551TRL with alternatives