SMLJ150 vs 3.0SMCJ150A-GT3 feature comparison

SMLJ150 Microsemi Corporation

Buy Now Datasheet

3.0SMCJ150A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code DO-214AB
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 204 V 192.5 V
Breakdown Voltage-Min 167 V 167 V
Breakdown Voltage-Nom 186 V
Clamping Voltage-Max 268 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.61 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 150 V 150 V
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 138 1
Reference Standard UL RECOGNIZED

Compare SMLJ150 with alternatives

Compare 3.0SMCJ150A-GT3 with alternatives