We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

SMLJ150 vs 3.0SMCJ150A feature comparison

SMLJ150 International Semiconductor Inc

Buy Now Datasheet

3.0SMCJ150A Diodes Incorporated

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC DIODES INC
Package Description R-PDSO-C2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW INDUCTANCE
Breakdown Voltage-Max 204 V
Breakdown Voltage-Min 167 V
Breakdown Voltage-Nom 186 V
Clamping Voltage-Max 268 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity UNIDIRECTIONAL
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 150 V
Reverse Current-Max 5 µA
Surface Mount YES
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL
Base Number Matches 4 21
Date Of Intro 2018-10-03
Diodes » Transient Suppressors
Diodes » Transient Suppressors

Compare SMLJ150 with alternatives