SMF85A-R1-10001
vs
SMF85AF2
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
YANGZHOU YANGJIE ELECTRONICS CO LTD
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
104 V
104 V
Breakdown Voltage-Min
94.4 V
94.4 V
Breakdown Voltage-Nom
99.2 V
99.2 V
Clamping Voltage-Max
137 V
137 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-F2
R-PDSO-F2
Non-rep Peak Rev Power Dis-Max
200 W
200 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
0.4 W
Reference Standard
IEC-61249; MIL-STD-750
Rep Pk Reverse Voltage-Max
85 V
85 V
Reverse Current-Max
1 µA
1 µA
Reverse Test Voltage
85 V
85 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Rohs Code
Additional Feature
EXCELLENT CLAMPING CAPABILITY
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
10
Compare SMF85A-R1-10001 with alternatives
Compare SMF85AF2 with alternatives