SMF64A_R1_00001
vs
SMF64AH
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PANJIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
78.6 V
78.6 V
Breakdown Voltage-Min
71.1 V
71.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-F2
R-PDSO-F2
Non-rep Peak Rev Power Dis-Max
200 W
200 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Reference Standard
IEC-61000-4-2
AEC-Q101; IEC-61249-2-21
Rep Pk Reverse Voltage-Max
64 V
64 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
1
Package Description
SOD-123W, 2 PIN
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom
74.85 V
Clamping Voltage-Max
103 V
Forward Voltage-Max (VF)
3.5 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Reverse Current-Max
1 µA
Reverse Test Voltage
64 V
Terminal Finish
Matte Tin (Sn)
Compare SMF64A_R1_00001 with alternatives
Compare SMF64AH with alternatives