SMF64A_R1_00001
vs
SMF64AHRVG
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
PANJIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
78.6 V
78.6 V
Breakdown Voltage-Min
71.1 V
71.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-F2
R-PDSO-F2
Non-rep Peak Rev Power Dis-Max
200 W
200 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Reference Standard
IEC-61000-4-2
AEC-Q101
Rep Pk Reverse Voltage-Max
64 V
64 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
1
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW POWER LOSS
Breakdown Voltage-Nom
74.85 V
Clamping Voltage-Max
103 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Terminal Finish
MATTE TIN
Compare SMF64A_R1_00001 with alternatives
Compare SMF64AHRVG with alternatives