SMDJ48A vs 3.0SMCJ48 feature comparison

SMDJ48A MDE Semiconductor Inc

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3.0SMCJ48 Galaxy Microelectronics

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MDE SEMICONDUCTOR INC CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code DO-214AB
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature PD-MIN EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 58.9 V 65.1 V
Breakdown Voltage-Min 53.3 V 53.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED MIL-STD-202
Rep Pk Reverse Voltage-Max 48 V 48 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 20 19
Breakdown Voltage-Nom 59.2 V
Clamping Voltage-Max 85.5 V
Reverse Current-Max 5 µA
Reverse Test Voltage 48 V

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