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3.0SMCJ48 by:

Transient Suppressor,

Part Details for 3.0SMCJ48 by Galaxy Microelectronics

Overview of 3.0SMCJ48 by Galaxy Microelectronics

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Part Details for 3.0SMCJ48

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3.0SMCJ48 Part Data Attributes

3.0SMCJ48 Galaxy Microelectronics
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3.0SMCJ48 Galaxy Microelectronics Transient Suppressor,
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 65.1 V
Breakdown Voltage-Min 53.3 V
Breakdown Voltage-Nom 59.2 V
Clamping Voltage-Max 85.5 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity UNIDIRECTIONAL
Reference Standard MIL-STD-202
Rep Pk Reverse Voltage-Max 48 V
Reverse Current-Max 5 µA
Reverse Test Voltage 48 V
Surface Mount YES
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL

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