SMDJ40A vs SMDJ40AHV6G feature comparison

SMDJ40A DB Lectro Inc

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SMDJ40AHV6G Taiwan Semiconductor

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer DB LECTRO INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 49.1 V 49.1 V
Breakdown Voltage-Min 44.4 V 44.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 40 V 40 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code Yes
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 46.75 V
Clamping Voltage-Max 64.5 V
Forward Voltage-Max (VF) 3.5 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 6.5 W
Reference Standard AEC-Q101
Reverse Current-Max 1 µA
Reverse Test Voltage 40 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare SMDJ40A with alternatives

Compare SMDJ40AHV6G with alternatives