SMDJ40AHV6G
vs
SMLJ40
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Category CO2 Kg
8.54
8.54
Compliance Temperature Grade
Military: -55C to +175C
Military: -65C to +175C
EU RoHS Version
RoHS 2 (2015/863/EU)
EU RoHS Exemptions
7(a), 7(c)-I
Candidate List Date
2020-01-16
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.22
Qualifications
AEC-Q101
Additional Feature
EXCELLENT CLAMPING CAPABILITY
LOW INDUCTANCE
Breakdown Voltage-Max
49.1 V
54.3 V
Breakdown Voltage-Min
44.4 V
44.4 V
Breakdown Voltage-Nom
46.75 V
49.4 V
Clamping Voltage-Max
64.5 V
71.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
40 V
40 V
Reverse Current-Max
1 µA
5 µA
Reverse Test Voltage
40 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
1
4
Package Description
R-PDSO-C2
Qualification Status
Not Qualified
Compare SMDJ40AHV6G with alternatives
Compare SMLJ40 with alternatives