SMCJ8.5A-G vs 1SMC8.5ATR13 feature comparison

SMCJ8.5A-G Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

1SMC8.5ATR13 Central Semiconductor Corp

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD CENTRAL SEMICONDUCTOR CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown not_compliant
Breakdown Voltage-Max 10.82 V 10.82 V
Breakdown Voltage-Min 9.44 V 9.44 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 8.5 V 8.5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 8 6
Pbfree Code No
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 10.13 V
Clamping Voltage-Max 14.4 V
JESD-609 Code e0
Terminal Finish TIN LEAD

Compare SMCJ8.5A-G with alternatives

Compare 1SMC8.5ATR13 with alternatives