SMCJ6.0 vs SMCJ6.0A-ATR feature comparison

SMCJ6.0 DB Lectro Inc

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SMCJ6.0A-ATR Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer DB LECTRO INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown compliant
Base Number Matches 49 1
Rohs Code Yes
Package Description R-PDSO-C2
ECCN Code EAR99
HTS Code 8541.10.00.50
Date Of Intro 2018-08-30
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 7.37 V
Breakdown Voltage-Min 6.67 V
Breakdown Voltage-Nom 7.02 V
Clamping Voltage-Max 10.3 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 6 V
Reverse Current-Max 800 µA
Reverse Test Voltage 6 V
Surface Mount YES
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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