SMCJ6.0A-ATR vs SMCJ6.0ATR feature comparison

SMCJ6.0A-ATR Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

SMCJ6.0ATR Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2018-08-30 2018-08-30
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 7.37 V 7.37 V
Breakdown Voltage-Min 6.67 V 6.67 V
Breakdown Voltage-Nom 7.02 V 7.02 V
Clamping Voltage-Max 10.3 V 10.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 6 V 6 V
Reverse Current-Max 800 µA 800 µA
Reverse Test Voltage 6 V 6 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 2

Compare SMCJ6.0A-ATR with alternatives

Compare SMCJ6.0ATR with alternatives