SMCJ45A
vs
MSMCJLCE43AE3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
INTERNATIONAL SEMICONDUCTOR INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
55.3 V
52.8 V
Breakdown Voltage-Min
50 V
47.8 V
Breakdown Voltage-Nom
52.7 V
50.3 V
Clamping Voltage-Max
72.7 V
69.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-40 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
45 V
43 V
Reverse Current-Max
5 µA
5 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Rohs Code
Package Description
SMCJ, 2 PIN
Factory Lead Time
40 Weeks
Additional Feature
HIGH RELIABILITY
Diode Capacitance-Min
100 pF
JEDEC-95 Code
DO-214AB
JESD-609 Code
e3
Moisture Sensitivity Level
1
Reference Standard
IEC-61000-4-2, 4-4, 4-5
Reverse Test Voltage
43 V
Terminal Finish
MATTE TIN
Compare SMCJ45A with alternatives
Compare MSMCJLCE43AE3 with alternatives