SMCJ13A-M3/9AT
vs
1N5610E3
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
VISHAY SEMICONDUCTORS
|
MICROCHIP TECHNOLOGY INC
|
| Part Package Code |
DO-214AB
|
|
| Package Description |
R-PDSO-C2
|
HERMETICALLY SEALED, GLASS PACKAGE-2
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Additional Feature |
EXCELLENT CLAMPING CAPABILITY
|
HIGH RELIABILITY, METALLURGICALLY BONDED
|
| Breakdown Voltage-Max |
15.9 V
|
|
| Breakdown Voltage-Min |
14.4 V
|
33 V
|
| Breakdown Voltage-Nom |
15.15 V
|
|
| Clamping Voltage-Max |
21.5 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| Forward Voltage-Max (VF) |
3.5 V
|
|
| JEDEC-95 Code |
DO-214AB
|
|
| JESD-30 Code |
R-PDSO-C2
|
O-LALF-W2
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
6.5 W
|
3 W
|
| Reference Standard |
UL RECOGNIZED
|
|
| Rep Pk Reverse Voltage-Max |
13 V
|
30.5 V
|
| Surface Mount |
YES
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
C BEND
|
WIRE
|
| Terminal Position |
DUAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
2
|
2
|
| Factory Lead Time |
|
21 Weeks
|
| Case Connection |
|
ISOLATED
|
|
|
|
Compare SMCJ13A-M3/9AT with alternatives
Compare 1N5610E3 with alternatives