1N5610E3
vs
SM15T15A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
MICROSEMI CORP
TELEFUNKEN MICROELECTRONICS GMBH
Package Description
HERMETICALLY SEALED, GLASS PACKAGE-2
SMC, 2 PIN
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Samacsys Manufacturer
Microsemi Corporation
Additional Feature
HIGH RELIABILITY, METALLURGICALLY BONDED
Breakdown Voltage-Min
33 V
14.3 V
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
LONG FORM
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
6.5 W
Rep Pk Reverse Voltage-Max
30.5 V
12.8 V
Surface Mount
NO
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
C BEND
Terminal Position
AXIAL
DUAL
Base Number Matches
2
4
Rohs Code
No
Breakdown Voltage-Max
15.8 V
Breakdown Voltage-Nom
15 V
Clamping Voltage-Max
21.2 V
JEDEC-95 Code
DO-214AB
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Reverse Test Voltage
12.8 V
Compare 1N5610E3 with alternatives