1N5610E3 vs SM15T15A feature comparison

1N5610E3 Microsemi Corporation

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SM15T15A Telefunken Microelectronics Gmbh

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP TELEFUNKEN MICROELECTRONICS GMBH
Package Description HERMETICALLY SEALED, GLASS PACKAGE-2 SMC, 2 PIN
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Microsemi Corporation
Additional Feature HIGH RELIABILITY, METALLURGICALLY BONDED
Breakdown Voltage-Min 33 V 14.3 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 6.5 W
Rep Pk Reverse Voltage-Max 30.5 V 12.8 V
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Base Number Matches 2 4
Rohs Code No
Breakdown Voltage-Max 15.8 V
Breakdown Voltage-Nom 15 V
Clamping Voltage-Max 21.2 V
JEDEC-95 Code DO-214AB
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Reverse Test Voltage 12.8 V

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