SMCJ12C-GT3 vs SMCJ12C-E3/57T feature comparison

SMCJ12C-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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SMCJ12C-E3/57T Vishay Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD VISHAY SEMICONDUCTORS
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 16.9 V 16.3 V
Breakdown Voltage-Min 13.3 V 13.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 12 V 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
Part Package Code DO-214AB
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 14.8 V
Clamping Voltage-Max 22 V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 6.5 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare SMCJ12C-GT3 with alternatives

Compare SMCJ12C-E3/57T with alternatives