SMCJ12C-E3/57T vs SMCJ12C.TB feature comparison

SMCJ12C-E3/57T Vishay Intertechnologies

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SMCJ12C.TB Semtech Corporation

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC SEMTECH CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 16.3 V
Breakdown Voltage-Min 13.3 V 13.3 V
Breakdown Voltage-Nom 14.8 V
Clamping Voltage-Max 22 V 22 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 6.5 W 5 W
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 1
Package Description R-PDSO-C2
Qualification Status Not Qualified
Reverse Current-Max 5 µA

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