SMCJ100HE3/57T vs SMCJ100-E3/9AT feature comparison

SMCJ100HE3/57T Vishay Intertechnologies

Buy Now Datasheet

SMCJ100-E3/9AT Vishay Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC VISHAY SEMICONDUCTORS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 136 V 136 V
Breakdown Voltage-Min 111 V 111 V
Breakdown Voltage-Nom 123.5 V 123.5 V
Clamping Voltage-Max 179 V 179 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 6.5 W
Reference Standard AEC-Q101; UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
Part Package Code DO-214AB
Package Description R-PDSO-C2
Pin Count 2
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare SMCJ100-E3/9AT with alternatives