SMCJ100-E3/9AT
vs
MQSMCJLCE100AE3TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
VISHAY SEMICONDUCTORS
MICROSEMI CORP
Part Package Code
DO-214AB
DO-214AB
Package Description
R-PDSO-C2
R-PDSO-C2
Pin Count
2
2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
TR, 7 INCH: 750
Breakdown Voltage-Max
136 V
123 V
Breakdown Voltage-Min
111 V
111 V
Breakdown Voltage-Nom
123.5 V
117 V
Clamping Voltage-Max
179 V
162 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
MIL-19500
Rep Pk Reverse Voltage-Max
100 V
100 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
2
1
JESD-609 Code
e3
Terminal Finish
MATTE TIN
Compare SMCJ100-E3/9AT with alternatives
Compare MQSMCJLCE100AE3TR with alternatives