SMBJP6KE75AHE3-TP vs P6SMB75_R1_10001 feature comparison

SMBJP6KE75AHE3-TP Micro Commercial Components

Buy Now Datasheet

P6SMB75_R1_10001 PanJit Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICRO COMMERCIAL COMPONENTS CORP PAN JIT INTERNATIONAL INC
Package Description R-PDSO-C2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer MCC
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 78.8 V 82.5 V
Breakdown Voltage-Min 71.3 V 67.5 V
Clamping Voltage-Max 103 V 144 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 64.1 V 81 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10 NOT SPECIFIED
Base Number Matches 3 2
Pbfree Code Yes
Breakdown Voltage-Nom 100 V

Compare SMBJP6KE75AHE3-TP with alternatives

Compare P6SMB75_R1_10001 with alternatives