SMBJ8.0CA
vs
SMBJ7.5CAM4G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Package Description
R-PDSO-J2
SMB, 2 PIN
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
9.83 V
9.21 V
Breakdown Voltage-Min
8.89 V
8.33 V
Breakdown Voltage-Nom
9.36 V
8.77 V
Clamping Voltage-Max
13.6 V
12.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-J2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
8 V
7.5 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
J BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
56
1
JESD-609 Code
e3
Moisture Sensitivity Level
1
Power Dissipation-Max
3 W
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Compare SMBJ8.0CA with alternatives
Compare SMBJ7.5CAM4G with alternatives