SMBJ8.0.TF
vs
SMBJ8.0-GT3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SEMTECH CORP
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Min
8.89 V
8.99 V
Clamping Voltage-Max
15 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
Qualification Status
Not Qualified
Not Qualified
Reverse Current-Max
50 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
2
Rohs Code
Package Description
R-PDSO-C2
Breakdown Voltage-Max
11.3 V
Moisture Sensitivity Level
1
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
8 V
Compare SMBJ8.0.TF with alternatives
Compare SMBJ8.0-GT3 with alternatives