SMBJ8.0.TF
vs
P6SMBJ8.0
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SEMTECH CORP
DIOTEC SEMICONDUCTOR AG
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
8.89 V
8.9 V
Clamping Voltage-Max
15 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-50 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
5 W
Qualification Status
Not Qualified
Not Qualified
Reverse Current-Max
50 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
11
Rohs Code
Part Package Code
DO-214AA
Package Description
SMB, 2 PIN
Pin Count
2
Breakdown Voltage-Max
10.9 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Rep Pk Reverse Voltage-Max
8 V
Terminal Finish
Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s)
5
Compare SMBJ8.0.TF with alternatives
Compare P6SMBJ8.0 with alternatives