SMBJ75CA-H vs SMBJ75C-T3 feature comparison

SMBJ75CA-H Bourns Inc

Buy Now Datasheet

SMBJ75C-T3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer BOURNS INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Bourns
Additional Feature PRSM-MIN
Breakdown Voltage-Max 92.1 V 101.81 V
Breakdown Voltage-Min 83.3 V 83.3 V
Breakdown Voltage-Nom 87.7 V
Clamping Voltage-Max 121 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W
Reference Standard IEC-61000-4-2, 4-4, 4-5 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 75 V 75 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 2
Qualification Status Not Qualified

Compare SMBJ75CA-H with alternatives

Compare SMBJ75C-T3 with alternatives