SMBJ6.0CA vs P6SMB7.5CHR4 feature comparison

SMBJ6.0CA Galaxy Microelectronics

Buy Now Datasheet

P6SMB7.5CHR4 Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Part Package Code SMB
Package Description SMB, 2 PIN R-PDSO-C2
Reach Compliance Code unknown compliant
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 7.37 V 8.25 V
Breakdown Voltage-Min 6.67 V 6.75 V
Breakdown Voltage-Nom 7.02 V 7.5 V
Clamping Voltage-Max 10.3 V 11.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-J2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 6 V 6.05 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 4
ECCN Code EAR99
HTS Code 8541.10.00.50
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 3 W
Terminal Finish MATTE TIN

Compare SMBJ6.0CA with alternatives

Compare P6SMB7.5CHR4 with alternatives