SMBJ6.0C-GT3
vs
TGL41-56A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
INTERNATIONAL SEMICONDUCTOR INC
Package Description
R-PDSO-C2
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Max
8.45 V
58.8 V
Breakdown Voltage-Min
6.67 V
53.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
JESD-30 Code
R-PDSO-C2
O-PELF-N2
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-40 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
6 V
48 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
NO LEAD
Terminal Position
DUAL
END
Base Number Matches
2
1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Nom
56 V
Case Connection
ISOLATED
Clamping Voltage-Max
77 V
Power Dissipation-Max
1 W
Reverse Current-Max
5 µA
Compare SMBJ6.0C-GT3 with alternatives
Compare TGL41-56A with alternatives