SMBJ33A vs SMBJ33A-E3/5B feature comparison

SMBJ33A DB Lectro Inc

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SMBJ33A-E3/5B Vishay Semiconductors

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer DB LECTRO INC VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
Breakdown Voltage-Nom 38.7 V 38.65 V
Clamping Voltage-Max 53.3 V 53.3 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 33 V 33 V
Surface Mount YES YES
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Breakdown Voltage-Max 40.6 V
Breakdown Voltage-Min 36.7 V
Configuration SINGLE
Diode Element Material SILICON
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Reverse Current-Max 1 µA
Reverse Test Voltage 33 V
Technology AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ33A with alternatives

Compare SMBJ33A-E3/5B with alternatives