SMBJ33 vs MSMBJ33A feature comparison

SMBJ33 Bytesonic Corporation

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MSMBJ33A Microchip Technology Inc

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Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer BYTESONIC ELECTRONICS CO LTD MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN HIGH RELIABILITY
Breakdown Voltage-Max 44.9 V 40.6 V
Breakdown Voltage-Min 36.7 V 36.7 V
Breakdown Voltage-Nom 40.8 V
Clamping Voltage-Max 59 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 1.2 V
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-J2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard MIL-STD-202
Rep Pk Reverse Voltage-Max 33 V 33 V
Reverse Current-Max 5 µA
Reverse Test Voltage 33 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND J BEND
Terminal Position DUAL DUAL
Base Number Matches 4 4
Package Description PLASTIC, SMBJ, 2 PIN
Factory Lead Time 40 Weeks
JESD-609 Code e0
Moisture Sensitivity Level 1
Power Dissipation-Max 1.38 W
Qualification Status Not Qualified
Terminal Finish TIN LEAD

Compare SMBJ33 with alternatives

Compare MSMBJ33A with alternatives