SMBJ180CAM4G
vs
SMBJ190C
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
MERITEK ELECTRONICS CORP
|
Package Description |
R-PDSO-C2
|
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Additional Feature |
EXCELLENT CLAMPING CAPABILITY
|
EXCELLENT CLAMPING CAPABILITY
|
Breakdown Voltage-Max |
222 V
|
258.4 V
|
Breakdown Voltage-Min |
201 V
|
211.28 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JEDEC-95 Code |
DO-214AA
|
DO-214AA
|
JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
1
|
Non-rep Peak Rev Power Dis-Max |
600 W
|
600 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
Power Dissipation-Max |
5 W
|
5 W
|
Rep Pk Reverse Voltage-Max |
180 V
|
190 V
|
Surface Mount |
YES
|
YES
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
C BEND
|
C BEND
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
1
|
4
|
Breakdown Voltage-Nom |
|
234.84 V
|
Clamping Voltage-Max |
|
340.1 V
|
Peak Reflow Temperature (Cel) |
|
260
|
Reference Standard |
|
MIL-STD-750
|
Reverse Current-Max |
|
1 µA
|
Reverse Test Voltage |
|
190 V
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare SMBJ180CAM4G with alternatives
Compare SMBJ190C with alternatives