SMBJ190C vs SMBJ180C feature comparison

SMBJ190C MERITEK Electronics Corporation

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SMBJ180C Galaxy Semi-Conductor Co Ltd

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MERITEK ELECTRONICS CORP GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 258.4 V 245 V
Breakdown Voltage-Min 211.28 V 200 V
Breakdown Voltage-Nom 234.84 V 222.5 V
Clamping Voltage-Max 340.1 V 321 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W
Reference Standard MIL-STD-750
Rep Pk Reverse Voltage-Max 190 V 180 V
Reverse Current-Max 1 µA 5 µA
Reverse Test Voltage 190 V 180 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 4 13

Compare SMBJ190C with alternatives

Compare SMBJ180C with alternatives