SMBJ160 vs SMBJ160A feature comparison

SMBJ160 Taiwan Semiconductor

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SMBJ160A RFE International Inc

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Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD RFE INTERNATIONAL INC
Package Description R-PDSO-C2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 218 V
Breakdown Voltage-Min 178 V
Breakdown Voltage-Nom 198 V
Clamping Voltage-Max 287 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 5 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 3 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 160 V
Reverse Current-Max 1 µA
Reverse Test Voltage 160 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 56 1

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