SMBJ150CATRE3
vs
SMBJ150C
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
MICROSEMI CORP
GOODWORK SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
TR, 7 INCH: 750
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
185 V
211.5 V
Breakdown Voltage-Min
167 V
167 V
Breakdown Voltage-Nom
176 V
189.25 V
Clamping Voltage-Max
243 V
268 V
Configuration
SINGLE
SINGLE
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1.38 W
Rep Pk Reverse Voltage-Max
150 V
150 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
10
Base Number Matches
1
44
Package Description
R-PDSO-C2
Diode Element Material
SILICON
Compare SMBJ150CATRE3 with alternatives
Compare SMBJ150C with alternatives