SMBJ12 vs SMBJ12 feature comparison

SMBJ12 BrightKing Inc

Buy Now Datasheet

SMBJ12 Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Transferred Active
Ihs Manufacturer BRIGHTKING INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 14 V 14.8 V
Clamping Voltage-Max 19.9 V 22 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 12 V 12 V
Surface Mount YES YES
Base Number Matches 28 112
Rohs Code Yes
Package Description R-PDSO-C2
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 16.3 V
Breakdown Voltage-Min 13.3 V
Configuration SINGLE
Diode Element Material SILICON
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 3 W
Qualification Status Not Qualified
Reverse Current-Max 1 µA
Reverse Test Voltage 12 V
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ12 with alternatives

Compare SMBJ12 with alternatives