SMBJ12
vs
SMBJ12E3TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
MICROSEMI CORP
Package Description
R-PDSO-J2
R-PDSO-C2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
TR, 7 INCH; 750
Breakdown Voltage-Max
16.3 V
16.3 V
Breakdown Voltage-Min
13.3 V
13.3 V
Breakdown Voltage-Nom
14.8 V
14.8 V
Clamping Voltage-Max
22 V
22 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-J2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
12 V
12 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
J BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
47
1
Part Package Code
DO-214AA
Pin Count
2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Power Dissipation-Max
1.38 W
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
10
Compare SMBJ12 with alternatives
Compare SMBJ12E3TR with alternatives