SMBJ110
vs
SMBJ110AT3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MDE SEMICONDUCTOR INC
CRYDOM INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
LOW INDUCTANCE
Breakdown Voltage-Max
141.35 V
140.5 V
Breakdown Voltage-Min
115.65 V
122 V
Breakdown Voltage-Nom
128.5 V
131 V
Clamping Voltage-Max
177 V
177 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
MIL-STD-750, UL LISTED
Rep Pk Reverse Voltage-Max
110 V
110 V
Reverse Current-Max
1 µA
Reverse Test Voltage
110 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
6
1
Package Description
R-PDSO-C2
Power Dissipation-Max
1.5 W
Qualification Status
Not Qualified
Compare SMBJ110 with alternatives
Compare SMBJ110AT3 with alternatives