SMBJ110AT3 vs SMBJ110AHR4G feature comparison

SMBJ110AT3 Crydom Inc

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SMBJ110AHR4G Taiwan Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer CRYDOM INC TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2 SMB, 2 PIN
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW INDUCTANCE EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 140.5 V 135 V
Breakdown Voltage-Min 122 V 122 V
Breakdown Voltage-Nom 131 V 128.5 V
Clamping Voltage-Max 177 V 177 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.5 W 3 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 110 V 110 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 1
Rohs Code Yes
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ110AT3 with alternatives

Compare SMBJ110AHR4G with alternatives