SMBJ110 vs SMBJ110A feature comparison

SMBJ110 Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet

SMBJ110A DB Lectro Inc

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD DB LECTRO INC
Package Description R-PDSO-J2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 149 V
Breakdown Voltage-Min 122 V
Breakdown Voltage-Nom 135.5 V
Clamping Voltage-Max 196 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-J2
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 110 V
Surface Mount YES
Technology AVALANCHE
Terminal Form J BEND
Terminal Position DUAL
Base Number Matches 4 1

Compare SMBJ110 with alternatives

Compare SMBJ110A with alternatives